Raytheon Achieves Key Testing Milestone for Next-Generation GaN Semiconductor Technology
Company Leads The Industry in Chip Development For RF and Microwave Signal Applications
(TEWKSBURY, Mass., Jan. 11, 2006) -- Gallium nitride (GaN) semiconductor circuits developed by Raytheon Company's (NYSE: RTN) Integrated Defense Systems (IDS) have passed a key testing milestone, demonstrating the reliability of this technology for high-power applications in military radar, communications, electronic warfare and missile systems.
The company recently completed 8,000 hours of successful operational testing on GaN semiconductor monolithic microwave integrated circuits (MMICs), reaffirming the company's leadership in the development of this advanced semiconductor material for applications in frequency ranges crucial to many defense-related systems and equipment.
The testing is being conducted at elevated temperatures and operating conditions to simulate performance over a much longer period of time. The test conditions approximate an operational lifetime of 80,000 hours, or more than nine years of normal operation. Raytheon plans to continue accumulating test hours on these GaN MMICs into 2007. Independent concurrent validation will also continue into 2007.
"GaN semiconductors are capable of delivering up to 10-times higher power levels compared with the current technology," said Mark Russell, IDS' vice president of engineering. "Combined with their enhanced thermal characteristics, they offer the potential for improved performance in current and future military applications."
Russell added that GaN technology can significantly expand the warfighter's reach into the battlespace by trading off increases in range, sensitivity and search capability for same sized antennas. Alternatively, GaN technology can reduce the radar antenna size by half while more than doubling the search volume. This last feature would improve the radar's transportability and reduce acquisition and lifecycle costs.
GaN semiconductors offer substantially improved power and functionality beyond current semiconductor technologies. They operate at higher voltage levels allowing significantly greater power output for the same size chip.
Additionally, the material characteristics of GaN semiconductors offer efficient multi-band or wideband operation.
Source : Raytheon
Recent News from Raytheon
homepage 
print this page 
tell-a-friend